NID dryer

NID stands for Nitrogen-IPA-Dispense.
The drying principle is based on the Marangoni effect.

An IPA/N2 gas is introduced in the process chamber. A thin IPA layer is formed on the DI-water surface. Now the DI-water is drained at an adjustable speed.

The Marangoni effect occurs: The differential surface tension between IPA layer and DI-water forces the liquid to float down the water bulk.

After the process chamber is empty, hot N2 removes final traces of humidity from the process cassette.

The dryer can be automated in a wet bench or can be used as a stand-alone system.

Advantages of this system are:
 no wafer breackage, thin wafer capable
 low particle counts
 several wafer sizes can be processed in one dryer
 low IPA consumption
 IPA concentration monitoring possible

Data Sheet NID dryer

AP&S can offer other drying techniques like hot air, spin dry or Marangoni with lift. Please contact us for your challenge in substrate drying.

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